Description
1 Description
These N-channel enhancement mode power mosfets used
advanced trench technology design, provided excellent
Rdson and low gate charge. Which accords with the RoHS
standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
