These N-channel enhanced vdmosfets, is obtained by the self-aligned
planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the
RoHS standard. TO-220F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink.
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.8Ω)
● Low gate charge(Typ: 33.9nC)
● Low reverse transfer capacitances(Typ: 11.2pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.